vs-65pq015pbf, vs-65PQ015-N3 www.vishay.com vishay semiconductors revision: 11-oct-11 1 document number: 94246 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 65 a features ? 125 c t j operation (v r < 5 v) ? single diode configuration ? optimized for or-ing applications ? ultralow forward voltage drop ? guard ring for enhanced ruggedness and long term reliability ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description the vs-65pq015... schottky rectifier module has been optimized for ultralow forward voltage drop specifically for the or-ing of parallel po wer supplies. the proprietary barrier technology allows for re liable operation up to 125 c junction temperature. typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. product summary package to-247ac i f(av) 65 v v r 15 v v f at i f 0.46 v i rm max. 870 ma at 100 c t j max. 125 c diode variation single die e as 9 mj 2 13 base cathode anode anode to-247ac major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 65 a v rrm 15 v i fsm t p = 5 s sine 1500 a v f 65 apk, t j = 125 c 0.46 v t j range - 55 to 125 c voltage ratings parameter symbol test conditions vs-65p q015pbf vs-65PQ015-N3 units maximum dc reverse voltage v r t j = 100 c 15 15 v t j = 125 c 5 5 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 83 c, rectangular waveform 65 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1500 10 ms sine or 6 ms rect. pulse 400 non-repetitive avalanche energy e as t j = 25 c, i as = 2 a, l = 4.5 mh 9mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 2a
vs-65pq015pbf, vs-65PQ015-N3 www.vishay.com vishay semiconductors revision: 11-oct-11 2 document number: 94246 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units forward voltage drop v fm (1) 65 a t j = 25 c 0.50 v 130 a 0.71 65 a t j = 125 c 0.46 130 a 0.76 reverse leakage current i rm (1) t j = 125 c v r = 5 v 1.2 a t j = 25 c v r = rated v r 18 ma t j = 100 c 870 threshold voltage v f(to) t j = t j maximum 0.137 mv forward slope resistance r t 4.9 m ? maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 4300 pf typical series inductance l s measured lead to lead 5 mm from package body 8 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 55 to 125 c maximum storage temperature range t stg - 55 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.8 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.3 approximate weight 6g 0.21 oz. mounting torque minimum non-lubricated threads 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac (jedec) 65pq015
vs-65pq015pbf, vs-65PQ015-N3 www.vishay.com vishay semiconductors revision: 11-oct-11 3 document number: 94246 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 100 10 1000 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.5 1.0 1.5 2.0 0 j j t j = 125 c t j = 100 c t j = 25 c 1 10 100 1000 i r - reverse current (ma) v r - reverse voltage (v) 246 14 16 81012 0 t j = 100 c t j = 75 c t j = 50 c t j = 25 c 1000 10 000 c t - junction capacitance (pf) v r - reverse voltage (v) 6 4 8 10 12 16 14 2 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 100 10 single p u lse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-65pq015pbf, vs-65PQ015-N3 www.vishay.com vishay semiconductors revision: 11-oct-11 4 document number: 94246 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward powe r loss characteristics fig. 7 - maximum non-re petitive surge current fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 5 v 0 30 60 90 120 150 allowable case temperature (c) i f(av) - average forward current (a) 40 20 60 80 100 0 dc see note (1) square wave (d = 0.50) 5 v applied 0 60 40 20 8 0 average power loss (w) i f(av) - average forward current (a) 40 20 60 8 0 100 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 100 1000 10 000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and w ith rated v rrm applied follo w ing s u rge c u rrent monitor high-speed s w itch d.u.t. r g = 25 + free w heel diode v d = 25 v l irfp460 40hfl40s02
vs-65pq015pbf, vs-65PQ015-N3 www.vishay.com vishay semiconductors revision: 11-oct-11 5 document number: 94246 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-65pq015pbf 25 500 antistatic plastic tube vs-65PQ015-N3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95223 part marking information to-247ac modified pbf www.vishay.com/doc?95226 to-247ac modified -n3 www.vishay.com/doc?95007 spice model www.vishay.com/doc?95306 - current rating (65 = 65 a) - package: p = to-247 - schottky ?q? series - voltage code (015 = 15 v) device code 6 2 4 3 5 65 p q 015 pbf vs- 1 - vishay semiconductors product - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free environmental digit 2 3 4 5 6 1
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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